BSZ042N04NS G Product Summary OptiMOS3 Power-Transistor V 40 V DS Features R 4.2 m DS(on),max Fast switching MOSFET for SMPS I 40 A D Optimized technology for DC/DC converters 1) PG-TSDSON-8 Qualified according to JEDEC for target applications N-channel Normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superior thermal resistance Avalanche rated Pb-free plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking BSZ042N04NS G PG-TSDSON-8 042N04N Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I V =10 V, T =25 C Continuous drain current 40 A D GS C V =10 V, T =100 C 40 GS C 3) I T =25 C 160 Pulsed drain current D,pulse C 4) I T =25 C 20 Avalanche current, single pulse AS C E I =20 A, R =25 Avalanche energy, single pulse 150 mJ AS D GS Gate source voltage V 20 V GS 1) J-STD20 and JESD22 Rev. 1.3 page 1 2009-11-05BSZ042N04NS G Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit P T =25 C Power dissipation 69 W tot C T =25 C, A 2.1 2) R =60 K/W thJA T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1.8 K/W thJC 2 2) Device on PCB R -- 60 6 cm cooling area thJA Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =1 mA 40 - - V (BR)DSS GS D V V =V , I =36 A Gate threshold voltage 2- 4 GS(th) DS GS D V =40 V, V =0 V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25 C j V =40 V, V =0 V, DS GS - 10 100 T =125 C j I V =20 V, V =0 V Gate-source leakage current - 10 100 nA GSS GS DS Drain-source on-state resistance R V =10 V, I =20 A - 3.5 4.2 m DS(on) GS D R Gate resistance - 1.8 - G V >2 I R , DS D DS(on)max Transconductance g 30 61 - S fs I =30 A D 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information Rev. 1.3 page 2 2009-11-05