BSZ050N03MS G MOSFET S3O8 OptiMOS3 M-Series Power-MOSFET, V Features Optimized for 5V driver application (Notebook, VGA, POL) Low FOMSW for High Frequency SMPS 100% avalanche tested N-channel Very low on-resistance R V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) DS(on) 1) Qualified according to JEDEC for target applications Superior thermal resistance Pb-free plating RoHS compliant Halogen-free according to IEC61249-2-21 S1 8D S2 7D Table 1 Key Performance Parameters Parameter Value Unit S3 6D V DS 30 V G4 5D R , V =10V 4.5 m DS(on),max GS R , V =4.5V 5.7 m DS(on),max GS I 80 A D Type / Ordering Code Package Marking Related Links BSZ050N03MS G PG-TSDSON-8 050N03M - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.0, 2020-07-21OptiMOS3 M-Series Power-MOSFET, V BSZ050N03MS G Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 11 Trademarks . 11 Disclaimer 11 Final Data Sheet 2 Rev. 2.0, 2020-07-21