X-On Electronics has gained recognition as a prominent supplier of BSZ086P03NS3G MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSZ086P03NS3G MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSZ086P03NS3G Infineon

Name: BSZ086P03NS3G
Brand: Infineon
SKU: BSZ086P03NS3G_1_Infineon
Availability: InStock
Rating: 5 (11 reviews)

BSZ086P03NS3G electronic component of Infineon

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See Product Specifications

Part No.	BSZ086P03NS3G
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET P Channel 30V 13.5A 3.1V @ 105uA 8.6mO @ 20A,10V TSDSON-8 RoHS
Datasheet:	BSZ086P03NS3G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.5783 ea
Line Total: USD 0.58

Availability - 4947
Ship by Wed. 01 Jan to Mon. 06 Jan

MOQ: 1 Multiples: 1
Pack Size: 1

BSZ086P03NS3G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

4947

Ship by Wed. 01 Jan to Mon. 06 Jan

MOQ : 1
Multiples : 1

1 : USD 0.5783
10 : USD 0.4762
30 : USD 0.4251
100 : USD 0.3741
500 : USD 0.3193
1000 : USD 0.3047

Specifications

Manufacturer
Infineon Infineon

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
TSDSON - 8 TSDSON - 8

Brand Category
Infineon Infineon

Fet Type
P Channel P Channel

Drain To Source Voltagevdss
30 V 30 V

Continuous Drain Current Id @ 25°C
13.5 A 13.5 A

Vgsth Max @ Id
3.1V @ 105uA 3.1V @ 105uA

Rds On Max @ Id Vgs
8.6mO @ 20A,10V 8.6mO @ 20A,10V

Power Dissipation-Max Ta 25°C
2.1 W 2.1 W

Drain Source Voltage Vdss
30 V 30 V

Continuous Drain Current Id
13.5 A 13.5 A

Drain Source On Resistance Rdson@Vgs Id
8.6 mOhms @10V , 20A 8.6 mOhms @10V , 20A

Power Dissipation Pd
2.1 W 2.1 W

Gate Threshold Voltage Vgsth@Id
3.1 V @105uA 3.1 V @105uA

Type
P Channel P Channel

Notes:- Show Stocked Products With Similar Attributes.

BSZ086P03NS3G Alternative Parts

We are delighted to provide the BSZ086P03NS3G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSZ086P03NS3G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The BSZ086P03NS3G is a P-channel MOSFET developed by Infineon. It offers excellent switching performance with a 30V drain-source voltage rating, 13.5A maximum drain current, 3.1V @ 105µA gate threshold voltage, 8.6 mO @ 20A, 10V drain-source on-resistance, and it operates over a wide temperature range. It is in a compact TSDSON-8 package meeting RoHS compliant standards. This MOSFET is suitable for a variety of applications, including automotive, industrial, telecommunications, and computing.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
4947 Ship by Wed. 01 Jan to Mon. 06 Jan MOQ : 1 Multiples : 1	1 : USD 0.5783 10 : USD 0.4762 30 : USD 0.4251 100 : USD 0.3741 500 : USD 0.3193 1000 : USD 0.3047

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