X-On Electronics has gained recognition as a prominent supplier of BSZ086P03NS3GATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSZ086P03NS3GATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSZ086P03NS3GATMA1 Infineon

BSZ086P03NS3GATMA1 electronic component of Infineon
Images are for reference only
See Product Specifications
Part No.BSZ086P03NS3GATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Datasheet: BSZ086P03NS3GATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5000: USD 0.3315 ea
Line Total: USD 1657.5 
Availability - 82450
Ship by Wed. 25 Sep to Tue. 01 Oct
MOQ: 5000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
82450
Ship by Wed. 25 Sep to Tue. 01 Oct
MOQ : 5000
Multiples : 5000
5000 : USD 0.3315
10000 : USD 0.3315
15000 : USD 0.3315

4821
Ship by Tue. 01 Oct to Thu. 03 Oct
MOQ : 1
Multiples : 1
1 : USD 0.8648
10 : USD 0.7463
100 : USD 0.529
500 : USD 0.4382
1000 : USD 0.36
5000 : USD 0.3507
10000 : USD 0.3358

19400
Ship by Wed. 25 Sep to Tue. 01 Oct
MOQ : 5000
Multiples : 5000
5000 : USD 0.3567
10000 : USD 0.3483
15000 : USD 0.3394
25000 : USD 0.3361

14490
Ship by Wed. 25 Sep to Tue. 01 Oct
MOQ : 34
Multiples : 1
34 : USD 1.1977
50 : USD 1.0189
100 : USD 0.8255
200 : USD 0.7817
500 : USD 0.6857
1000 : USD 0.5899
5000 : USD 0.4907
10000 : USD 0.4339

   
Manufacturer
Product Category
Technology
Polarisation
Mounting
Case
Type Of Transistor
Drain-Source Voltage
On-State Resistance
Drain Current
Gate-Source Voltage
Power Dissipation
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We are delighted to provide the BSZ086P03NS3GATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSZ086P03NS3GATMA1 and other electronic components in the MOSFETs category and beyond.

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BSZ086P03NS3 G TM OptiMOS P3 Power-Transistor Product Summary V -30 V Features DS R 8.6 single P-Channel in S3O8 mW DS(on),max 1) Qualified according JEDEC for target applications I -40 A D PG-TSDSON-8 150 C operating temperature V =25 V, specially suited for notebook applications GS Pb-free RoHS compliant applications: battery management, load switching Halogen-free according to IEC61249-2-21 Type Package Marking Lead free Halogen free Packing Yes BSZ086P03NS3 G PG-TSDSON-8 086P3N Yes non-dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25C -40 A D C T =70C -40 C 2) -13.5 T =25 C A 3) Pulsed drain current I -160 T =25C D,pulse C Avalanche energy, single pulse E I =-20A, R =25W 105 mJ AS D GS V 25 Gate source voltage V GS P T =25C 69 Power dissipation W tot A 2) 2.1 T =25C A Operating and storage temperature T , T -55 150 C j stg 1C (1 kV - 2 kV) ESD class JESD22-A114 HBM 260 Soldering temperature C IEC climatic category DIN IEC 68-1 55/150/56 1) J-STD20 and JESD22 Rev. 2.03 page 1 2013-01-08BSZ086P03NS3 G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 1.8 K/W thJC junction - case Thermal resistance, 2 2) R - - 60 6 cm cooling area thJA junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V Drain-source breakdown voltage V =0V, I =-250mA -30 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =-105A -3.1 -2.5 -1.9 GS(th) DS GS D V =-30V, V =0V, DS GS I Zero gate voltage drain current - - -1 A DSS T =25C j V =-30V, V =0V, DS GS - - -10 T =125C j I V =-25V, V =0V Gate-source leakage current - - -100 nA GSS GS DS R V =-6V, I =-20A Drain-source on-state resistance - 8.7 13.4 mW DS(on) GS D V =-10V, I =-20A - 6.5 8.6 GS D R Gate resistance - 2.2 - W G V >2 I R , DS D DS(on)max Transconductance g 30 43 - S fs I =-20A D 2) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See Fig. 3 for more detailed information Rev. 2.03 page 2 2013-01-08

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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