BSZ15DC02KD H OptiMOS 2 + OptiMOS P 2 Small Signal Transistor Product Summary Features P N Complementary P + N channel V -20 20 V Enhancement mode DS R V =4.5 V 150 55 Super Logic level (2.5V rated) mW DS(on),max GS V =2.5 V 310 95 Common drain GS I -3.2 5.1 A Avalanche rated D 175 C operating temperature Qualified according to AEC Q101 100% lead-free RoHS compliant Halogen-free according to IEC61246-21 Type Package Marking Lead Free Halogen Free Packing BSZ15DC02KD H PG-TSDSON-8 15DC02K Yes Yes Non dry 1) Maximum ratings, at T =25 C, unless otherwise specified A Value Parameter Symbol Conditions Unit P N Continuous drain current I T =25 C -3.2 5.1 A D A T =100 C -2.2 3.6 A Pulsed drain current I T =25 C -13 20 D,pulse A P: I =-3.2 A, D N: I =5.1 A, Avalanche energy, single pulse E 11 11 mJ D AS R =25 W GS Gate source voltage V 12 V GS 2) Power dissipation T =25 C 2.5 W P A tot T , T -55 ... 175 Operating and storage temperature C j stg 0 (<250V) ESD class JESD22-A114-HBM T 260 Soldering temperature C solder 55/175/56 IEC climatic category DIN IEC 68-1 1) Remark: only one of both transistors active Rev 2.3 page 1 2019-01-17 BSZ15DC02KD H Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics P Thermal resistance, junction - R - - 8 K/W thJC case N 2 2) R Device on PCB - - 60 K/W thJA 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =-250 A Drain-source breakdown voltage P - - -20 V (BR)DSS GS D V =0 V, I =250 A N 20 - - GS D Gate threshold voltage P V V =V , I =-110 A -1.4 -1.0 -0.7 GS(th) DS GS D N V =V , I =110 A 0.8 1.1 1.4 DS GS D V =-20 V, V =0 V, DS GS I Zero gate voltage drain current P - - -0.1 A DSS T =25 C j V =20 V, V =0 V, DS GS N - - 0.1 T =25 C j V =-20 V, V =0 V, DS GS P - - -50 T =175 C j V =20 V, V =0 V, DS GS N - - 50 T =175 C j Gate-source leakage current P I V =12 V, V =0 V - - 100 nA GSS GS DS N V =-2.5 V, GS P R - 164 310 mW DS(on) Drain-source on-state I =2.1 A D resistance N V =2.5 V, I =1.9 A - 63 95 GS D P V =-4.5 V, I =-3.2 A - 97 150 GS D N V =4.5 V, I =5.1 A - 41 55 GS D V >2 I R , DS D DS(on)max g Transconductance P 3.4 6.9 - S fs I =-2.2 A D V >2 I R , DS D DS(on)max N 5.5 11 - I =3.6 A D 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev 2.3 page 2 2019-01-17