The Infineon BSZ160N10NS3G is a N-Channel MOSFET designed with a 100V drain-source voltage, 8A drain-source current, 3.5V gate-source voltage, 33uA gate-source current, 16mO on resistance at 20A, and a 10V threshold temperature. Manufactured with TSDSON-8 and compliant with the RoHS standard, it enables an efficient and reliable MOSFET high-side switching. It is ideal for use in automotive and industrial applications due to its power efficiency, protection features, and high-frequency switching capabilities.