X-On Electronics has gained recognition as a prominent supplier of BSZ160N10NS3G MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSZ160N10NS3G MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSZ160N10NS3G Infineon

Name: BSZ160N10NS3G
Brand: Infineon
SKU: BSZ160N10NS3G_1_Infineon
Availability: InStock
Rating: 5 (11 reviews)

BSZ160N10NS3G electronic component of Infineon

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See Product Specifications

Part No.	BSZ160N10NS3G
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET N Channel 100V 8A 3.5V @ 33uA 16mO @ 20A,10V TSDSON-8 RoHS
Datasheet:	BSZ160N10NS3G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.4426 ea
Line Total: USD 1.44

Availability - 158
Ship by Tue. 03 Dec to Fri. 06 Dec

MOQ: 1 Multiples: 1
Pack Size: 1

BSZ160N10NS3G More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

158

Ship by Tue. 03 Dec to Fri. 06 Dec

MOQ : 1
Multiples : 1

1 : USD 1.4426
10 : USD 1.1773
30 : USD 1.0325
100 : USD 0.8663
500 : USD 0.6452
1000 : USD 0.6107

Specifications

Manufacturer
Infineon Infineon

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
TSDSON - 8 TSDSON - 8

Brand Category
Infineon Infineon

Fet Type
N Channel N Channel

Drain To Source Voltagevdss
100 V 100 V

Continuous Drain Current Id @ 25°C
8 A 8 A

Vgsth Max @ Id
3.5V @ 33uA 3.5V @ 33uA

Rds On Max @ Id Vgs
16mO @ 20A,10V 16mO @ 20A,10V

Power Dissipation-Max Ta 25°C
2.1 W 2.1 W

Drain Source Voltage Vdss
100 V 100 V

Continuous Drain Current Id
8 A 8 A

Power Dissipation Pd
2.1 W 2.1 W

Drain Source On Resistance Rdson@Vgs Id
16 mOhms @10V , 20A 16 mOhms @10V , 20A

Gate Threshold Voltage Vgsth@Id
3.5 V @33uA 3.5 V @33uA

Type
N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

BSZ160N10NS3G Alternative Parts

We are delighted to provide the BSZ160N10NS3G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSZ160N10NS3G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The Infineon BSZ160N10NS3G is a N-Channel MOSFET designed with a 100V drain-source voltage, 8A drain-source current, 3.5V gate-source voltage, 33uA gate-source current, 16mO on resistance at 20A, and a 10V threshold temperature. Manufactured with TSDSON-8 and compliant with the RoHS standard, it enables an efficient and reliable MOSFET high-side switching. It is ideal for use in automotive and industrial applications due to its power efficiency, protection features, and high-frequency switching capabilities.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
158 Ship by Tue. 03 Dec to Fri. 06 Dec MOQ : 1 Multiples : 1	1 : USD 1.4426 10 : USD 1.1773 30 : USD 1.0325 100 : USD 0.8663 500 : USD 0.6452 1000 : USD 0.6107

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