Type BSZ22DN20NS3 G TM OptiMOS 3 Power-Transistor Product Summary Features V 200 V DS Optimized for dc-dc conversion R 225 m W DS(on),max N-channel, normal level I 7 A D Excellent gate charge x R product (FOM) DS(on) Low on-resistance R DS(on) PG-TSDSON-8 150 C operating temperature Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Halogen-free according to IEC61249-2-21 Type Package Marking BSZ22DN20NS3 G PG-TSDSON-8 22DN20N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C Continuous drain current 7.0 A D C T =100C 4.9 C 2) I T =25C 28 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =3.5A, R =25W 30 mJ AS D GS Reverse diode dv /dt dv /dt 10 kV/s V Gate source voltage 20 V GS Power dissipation P T =25C 34 W tot C Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) J-STD20 and JESD22 2) see figure 3 Rev. 2.2 page 1 2011-07-14BSZ22DN20NS3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 3.7 K/W thJC Thermal resistance, 2 3) R - - 60 thJA 6 cm cooling area junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 200 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =13A 2 3 4 GS(th) DS GS D V =160V, V =0V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25C j V =160V, V =0V, DS GS - 10 100 T =125C j Gate-source leakage current I V =20V, V =0V - 1 100 nA GSS GS DS Drain-source on-state resistance R V =10V, I =3.5A - 194 225 m W DS(on) GS D R Gate resistance - 1.6 - W G V >2 I R , DS D DS(on)max Transconductance g 3.5 7 - S fs I =3.5A D 3) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 2 2011-07-14