BSZ340N08NS3 G TM OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS Ideal for high frequency switching R 34 mW DS(on),max Optimized technology for DC/DC converters I 23 A D Excellent gate charge x R product (FOM) DS(on) N-channel, normal level 100% avalanche tested Pb-free plating RoHS compliant 1) Qualified according to JEDEC for target applications Halogen-free according to IEC61249-2-21 Type BSZ340N08NS3 G Package PG-TSDSON-8 Marking 340N08N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I V =10 V, T =25C Continuous drain current 23 A D GS C V =10 V, T =100C 15 GS C V =10 V, T =25C, GS A 6 2) R =60K/W thJA 3) I T =25C 92 Pulsed drain current D,pulse C 4) E I =12A, R =25W 20 mJ Avalanche energy, single pulse AS D GS Gate source voltage V 20 V GS 1) J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev. 2.3 page 1 2013-02-06BSZ340N08NS3 G Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Power dissipation P T =25C 32 W tot C T =25 C, A 2.1 2) R =60K/W thJA T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 3.9 K/W thJC R Device on PCB minimal footprint - - - thJA 2 2) - - 60 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 80 - - V (BR)DSS GS D V V =V , I =12A Gate threshold voltage 2 2.8 3.5 GS(th) DS GS D V =80V, V =0V, DS GS I Zero gate voltage drain current - 0.1 5 A DSS T =25C j V =80V, V =0V, DS GS - 10 100 T =125C j I V =20V, V =0V Gate-source leakage current - 10 100 nA GSS GS DS Drain-source on-state resistance R V =10V, I =12A - 27 34 mW DS(on) GS D V =6V, I =6A - 38 66 GS D R Gate resistance - 1 - W G V >2 I R , DS D DS(on)max g Transconductance 8 16 - S fs I =12A D Rev. 2.3 page 2 2013-02-06