BUZ 31 H3046 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Normal Level Pin 1 Pin 2 Pin 3 G D S Type V I R Package Pb-free DS D DS(on) BUZ 31 H 3046 200 V 14.5 A 0.2 PG-TO-262-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current I A D T = 30 C 14.5 C Pulsed drain current I Dpuls T = 25 C 58 C Avalanche current,limited by T I 13.5 jmax AR Avalanche energy,periodic limited by T E 9 mJ jmax AR Avalanche energy, single pulse E AS I = 14.5 A, V = 50 V, R = 25 D DD GS L = 1.42 mH, T = 25 C 200 j Gate source voltage V 20 V GS ESD-Sensitivity HBM as per MIL-STD 883 Class 1 Power dissipation P W tot T = 25 C 95 C Operating temperature T -55 ... + 150 C j Storage temperature T -55 ... + 150 stg Thermal resistance, chip case R 1.32 K/W thJC Thermal resistance, chip to ambient R 75 thJA DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Rev. 2.0 Page 1 2012-12-10BUZ 31 H3046 Electrical Characteristics, at T = 25C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V V (BR)DSS V = 0 V, I = 0.25 mA, T = 25 C 200 - - GS D j Gate threshold voltage V GS(th) V =V I = 1 mA 2.1 3 4 GS DS, D Zero gate voltage drain current I A DSS V = 200 V, V = 0 V, T = 25 C - 0.1 1 DS GS j V = 200 V, V = 0 V, T = 125 C - 10 100 DS GS j Gate-source leakage current I nA GSS V = 20 V, V = 0 V - 10 100 GS DS Drain-Source on-resistance R DS(on) V = 5 V, I = 9 A - 0.16 0.2 GS D Rev. 2.0 Page 2 2012-12-10