X-On Electronics has gained recognition as a prominent supplier of DD350N12K-K Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. DD350N12K-K Discrete Semiconductor Modules are a product manufactured by Infineon. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

DD350N12K-K Infineon

DD350N12K-K electronic component of Infineon
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Part No.DD350N12K-K
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules Rectifier Diode Module 1200V 350A
Datasheet: DD350N12K-K Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3
Multiples : 3
3 : USD 189.6568
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 175.7315
12 : USD 171.2925
27 : USD 170.3035
51 : USD 167.67
102 : USD 166.336
1002 : USD 166.3245
N/A

Obsolete
   
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We are delighted to provide the DD350N12K-K from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DD350N12K-K and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Datenblatt / Data sheet N Netz-Dioden-Modul DD350N Rectifier Diode Module DD350N DD350N..K..-K Elektrische Eigenschaften / Electrical properties Kenndaten Hchstzulssige Werte / Maximum rated values Elektrische Eigenschaften 1200 1400 V Periodische Spitzensperrspannung T = -40C... T V vj vj max RRM 1600 1800 V repetitive peak reverse voltages Thermische Eigenschaften 1300 1500 V Stospitzensperrspannung T = +25C... T V vj vj max RSM 1700 1900 V non-repetitive peak reverse voltage 550 A Durchlastrom-Grenzeffektivwert I FRMSM maximum RMS on-state current 350 A Dauergrenzstrom T = 100C I C FAVM average on-state current 13.000 A Stostrom-Grenzwert T = 25 C, t = 10 ms I vj P FSM 11.000 A surge current T = T , t = 10 ms vj vj max P 845.000 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 605.000 As It-value T = T , t = 10 ms vj vj max P Charakteristische Werte / Characteristic values max. 1,28 V Durchlaspannung T = T , i = 1000 A v vj vj max F F on-state voltage 0,75 V Schleusenspannung T = T V vj vj max (TO) threshold voltage 0,4 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Sperrstrom T = T , v = V i 30 mA vj vj max R RRM R reverse current Isolations-Prfspannung RMS, f = 50 Hz, t = 1 sec V 3,6 kV ISOL insulation test voltage RMS, f = 50 Hz, t = 1 min 3,0 kV Thermische Eigenschaften / Thermal properties pro Modul / per Module, = 180 sin R max. 0,065 C/W Innerer Wrmewiderstand thJC pro Zweig / per arm, = 180 sin max. 0,130 C/W thermal resistance, junction to case pro Modul / per Module, DC max. 0,062 C/W pro Zweig / per arm, DC max. 0,124 C/W pro Modul / per Module max. 0,02 C/W bergangs-Wrmewiderstand R thCH pro Zweig / per arm max. 0,04 C/W thermal resistance, case to heatsink 150 Hchstzulssige Sperrschichttemperatur T C vj max maximum junction temperature Betriebstemperatur Tc op - 40...+150 C operating temperature T - 40...+150 C stg Lagertemperatur storage temperature C. Drilling date of publication: 06.05.03 prepared by: revision: 1 approved by: M. Leifeld BIP AC / 95-06-06, K.-A. Rther A117/95 Seite/page 1/9 Datenblatt / Data sheet N Netz-Dioden-Modul DD350N Rectifier Diode Module Mechanische Eigenschaften / Mechanical properties Gehuse, siehe Anlage Seite 3 case, see annex page 3 Si-Element mit Druckkontakt Mechanische Eigenschaften Si-pellet with pressure contact Innere Isolation AlN internal insulation Anzugsdrehmoment fr mechanische Anschlsse Toleranz 15% M1 5 Nm mounting torque Anzugsdrehmoment fr elektrische Anschlsse Toleranz 10% M2 12 Nm terminal connection torque Gewicht G typ. 800 g weight Kriechstrecke 17 mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance file-No. E 83336 Mit diesem Datenblatt werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehrigen technischen Erluterungen. This data sheet specifies semiconductor devices, but promises no characteristics. It is valid in combination with the belonging technical notes. BIP AC / 95-06-06, K.-A. Rther A117/95 Seite/page 2/9

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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