X-On Electronics has gained recognition as a prominent supplier of IAUA180N04S5N012AUMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IAUA180N04S5N012AUMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IAUA180N04S5N012AUMA1 Infineon

IAUA180N04S5N012AUMA1 electronic component of Infineon
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Part No.IAUA180N04S5N012AUMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET_(20V 40V)
Datasheet: IAUA180N04S5N012AUMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.123 ea
Line Total: USD 2.12 
Availability - 2640
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
151
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 2.0189
10 : USD 1.7212
30 : USD 1.5362
100 : USD 1.3453
500 : USD 1.2595
1000 : USD 1.2213

2640
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 2.123
10 : USD 1.562
100 : USD 1.276
500 : USD 1.0846
1000 : USD 1.0153
2000 : USD 1.0153
4000 : USD 0.9757

   
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We are delighted to provide the IAUA180N04S5N012AUMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IAUA180N04S5N012AUMA1 and other electronic components in the MOSFETs category and beyond.

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IAUA180N04S5N012 OptiMOS -5 Power-Transistor Product Summary V 40 V DS R 1.2 m W DS(on),max I 180 A D Features PG-HSOF-5 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL3 up to 260C peak reflow 1 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested 1 2 3 4 5 Type Package Marking IAUA180N04S5N012 PG-HSOF-5 5N04N012 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 1) Continuous drain current I 180 A T =25C, V =10V D C GS 2) T =100C, V =10V 180 C GS 2) I T =25C 720 Pulsed drain current D,pulse C 2) E I =90A 175 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I 180 A AS V Gate source voltage - 20 V GS P T =25C Power dissipation 125 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg Rev. 1.0 page 1 2019-04-11 IAUA180N04S5N012 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics R Thermal resistance, junction - case - - - 1.0 K/W thJC Thermal resistance, junction - 2 3) R - - 60 thJA 6 cm cooling area ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 40 - - V (BR)DSS GS D V V =V , I =70A Gate threshold voltage 2.2 2.8 3.4 GS(th) DS GS D V =40V, V =0V, DS GS I Zero gate voltage drain current - - 1 A DSS T =25C j V =40V, V =0V, DS GS - - 100 2) T =125C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =7V, I =90A - 1.2 1.4 m W DS(on) GS D V =10V, I =90A - 1.0 1.2 GS D Rev. 1.0 page 2 2019-04-11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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