IAUA200N04S5N010 OptiMOS -5 Power-Transistor Product Summary V 40 V DS R 1 m W DS(on),max I 200 A D Features PG-HSOF-5 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL3 up to 260C peak reflow 1 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested 1 2 3 4 5 Type Package Marking IAUA200N04S5N010 PG-HSOF-5 5N04N010 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 1) Continuous drain current I 200 A T =25C, V =10V D C GS 2) T =100C, V =10V 200 C GS 2) I T =25C 800 Pulsed drain current D,pulse C 2) E I =100A 280 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 200 A AS V Gate source voltage - 20 V GS P T =25C Power dissipation 167 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg Rev. 1.1 page 1 2018-07-10IAUA200N04S5N010 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics R Thermal resistance, junction - case - - - 0.9 K/W thJC Thermal resistance, junction - 2 3) R - - 60 thJA 6 cm cooling area ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 40 - - V (BR)DSS GS D V V =V , I =100A Gate threshold voltage 2.2 2.8 3.4 GS(th) DS GS D V =40V, V =0V, DS GS I Zero gate voltage drain current - - 1 A DSS T =25C j V =40V, V =0V, DS GS - - 100 2) T =125C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =7V, I =100A - 0.9 1.2 m W DS(on) GS D V =10V, I =100A - 0.8 1.0 GS D Rev. 1.1 page 2 2018-07-10