IAUC120N04S6L008 OptiMOS - 6 Power-Transistor Product Summary V 40 V DS R 0.8 m DS(on),max I 120 A D Features PG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow 1 175C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IAUC120N04S6L008 PG-TDSON-8 6N04L008 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I T =25C, V =10V 120 A Continuous drain current D C GS 2) 120 T =100C, V =10V C GS 2) I T =25C 480 Pulsed drain current D,pulse C 2) E I =60A, R =25 400 mJ Avalanche energy, single pulse AS D G,min Avalanche current, single pulse I R =25 60 A AS G,min V Gate source voltage -16V GS P T =25C Power dissipation 150 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg Rev. 1.0 page 1 2018-09-27 IAUC120N04S6L008 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R---1.0K/W thJC Thermal resistance, junction - 2 3) R -- 50 thJA 6 cm cooling area ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I = 1mA 40 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =90A 1.2 1.6 2.0 GS(th) DS GS D V =40V, V =0V, DS GS Zero gate voltage drain current I -- 1A DSS T =25C j V =40V, V =0V, DS GS - - 100 2) T =125C j Gate-source leakage current I V =16V, V =0V - - 100 nA GSS GS DS R V =4.5V, I =60A Drain-source on-state resistance -0.9 1.1 m DS(on) GS D V =10V, I =60A -0.65 0.8 GS D 2) R -0.7 - Gate resistance G Rev. 1.0 page 2 2018-09-27