IAUC120N04S6N013 OptiMOS - 6 Power-Transistor Product Summary V 40 V DS R 1.3 m W DS(on),max I 120 A D Features PG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow 1 175C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IAUC120N04S6N013 PG-TDSON-8 6N04N013 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 1) I T =25C, V =10V 120 A Continuous drain current D C GS 2,3) 150 T =25C, V =10V C GS 2) T =100C, V =10V 120 C GS 2) I T =25C 480 Pulsed drain current D,pulse C 2) E I =60A, R =25W 184 mJ Avalanche energy, single pulse AS D G,min I R =25W Avalanche current, single pulse 60 A AS G,min Gate source voltage V - 20 V GS P T =25C Power dissipation 115 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg Rev. 1.0 page 1 2019-04-01 IAUC120N04S6N013 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics R Thermal resistance, junction - case - - - 1.3 K/W thJC Thermal resistance, junction - 2 4) R - - 50 thJA 6 cm cooling area ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 40 - - V (BR)DSS GS D V V =V , I =60A Gate threshold voltage 2.2 2.6 3.0 GS(th) DS GS D V =40V, V =0V, DS GS I Zero gate voltage drain current - - 1 A DSS T =25C j V =40V, V =0V, DS GS - - 15 2) T =125C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =7V, I =60A - 1.21 1.90 m W DS(on) GS D V =10V, I =60A - 1.02 1.34 GS D Rev. 1.0 page 2 2019-04-01