IAUC120N06S5N017 OptiMOS -5 Power Transistor Product Summary V 60 V DS Features R 1.7 m W DS(on),max OptiMOS power MOSFET for automotive applications I 120 A D N-channel - Enhancement mode - Normal level MSL1 up to 260C peak reflow PG-TDSON-8-43 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested 1 1 Type Package Marking IAUC120N06S5N017 PG-TDSON-8-43 5N06N017 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit V =10 V, Chip GS I Drain current 226 A D 1,2) limitation V =10V, DC GS 120 3) current T =85 C, V =10V, a GS 30 2,4) R on 2s2p thJA 2) I T =25 C, t = 100 s 757 Pulsed drain current D,pulse C p 2) E I =60 A 345 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 120 A AS V Gate source voltage - 20 V GS P T =25 C Power dissipation 167 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg Rev. 1.0 page 1 2020-05-04 IAUC120N06S5N017 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics R Thermal resistance, junction - case - - - 0.9 K/W thJC Thermal resistance, junction - R - - 23.3 - thJA 4) ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =1mA 60 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =94A 2.2 2.8 3.4 GS(th) DS GS D V =60V, V =0V, DS GS Zero gate voltage drain current I - - 1 A DSS T =25C j V =60V, V =0V, DS GS - - 100 1) T =125C j Gate-source leakage current I V =20V, V =0V - - 100 nA GSS GS DS R V =7V, I =30A Drain-source on-state resistance - 1.6 1.9 m W DS(on) GS D V =10V, I =60A - 1.3 1.7 GS D 2) R - - 1.6 - W Gate resistance G Rev. 1.0 page 2 2020-05-04