IAUC60N04S6L030H OptiMOS - 6 Power-Transistor Product Summary V 40 V DS R 3.0 m W DS(on),max I 60 A D Features PG-TDSON-8-56 OptiMOS - power MOSFET for automotive applications Half-Bridge - N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IAUC60N04S6L030H PG-TDSON-8-56 6N04L030 Maximum ratings per channel, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit V =10V, GS I Drain current 119 A D 1,2) Chip Limitation V =10V, GS 60 3) DC current T =85C, V =10V, a GS 22 2,4) R on 2s2p thJA 2) I T =25C, t =100s 311 Pulsed drain current D,pulse C p 2) E I =20A, R =25 100 mJ Avalanche energy, single pulse AS D g,min Avalanche current, single pulse I R =25 20 A AS g,min Gate source voltage V - 16 V GS P T =25C Power dissipation 75 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg Rev. 1.0 page 1 2020-09-18 IAUC60N04S6L030H Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics R Thermal resistance, junction - case - - - 2.0 K/W thJC Thermal resistance, R - - 34 - thJA 4) junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 40 - - V (BR)DSS GS D V V =V , I =25A Gate threshold voltage 1.2 1.6 2.0 GS(th) DS GS D V =40V, V =0V, DS GS I Zero gate voltage drain current - - 1 A DSS T =25C j V =40V, V =0V, DS GS - - 10 2) T =125C j I V =16V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =30A - 3.1 4.2 m W DS(on) GS D V =10V, I =30A - 2.3 3.0 GS D Rev. 1.0 page 2 2020-09-18