IAUC60N04S6N031H OptiMOS - 6 Power-Transistor Product Summary V 40 V DS R 3.1 m W DS(on),max I 60 A D Features PG-TDSON-8-56 OptiMOS - power MOSFET for automotive applications Half-Bridge - N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IAUC60N04S6N031H PG-TDSON-8-56 6N04N031 Maximum ratings per channel, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit V =10V, GS I Drain current 113 A D 1,2) Chip Limitation V =10V, GS 60 3) DC current T =85C, V =10V, a GS 22 2,4) R on 2s2p thJA 2) I T =25C, t =100s 311 Pulsed drain current D,pulse C p 2) E I =20A, R =25 100 mJ Avalanche energy, single pulse AS D g,min I Avalanche current, single pulse R =25 20 A AS g,min V Gate source voltage - 20 V GS Power dissipation P T =25C 75 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg Rev. 1.0 page 1 2020-09-22 IAUC60N04S6N031H Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 2.0 K/W thJC Thermal resistance, R - - 34 - thJA 4) junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I = 1mA 40 - - V (BR)DSS GS D V V =V , I =25A Gate threshold voltage 2.2 2.6 3.0 GS(th) DS GS D V =40V, V =0V, DS GS Zero gate voltage drain current I - - 1 A DSS T =25C j V =40V, V =0V, DS GS - - 10 2) T =125C j Gate-source leakage current I V =20V, V =0V - - 100 nA GSS GS DS R V =7V, I =30A Drain-source on-state resistance - 2.9 3.6 m W DS(on) GS D V =10V, I =30A - 2.4 3.1 GS D Rev. 1.0 page 2 2020-09-22