IAUC60N04S6N044 OptiMOS - 6 Power-Transistor Product Summary V 40 V DS R 4.5 m W DS(on),max I 60 A D Features PG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow 1 175C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IAUC60N04S6N044 PG-TDSON-8 6N04N044 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 1) I T =25C, V =10V 60 A Continuous drain current D C GS 2) T =100C, V =10V 50 C GS 2) I T =25C 240 Pulsed drain current D,pulse C 2) E I =12A, R =25W 48.0 mJ Avalanche energy, single pulse AS D G,min Avalanche current, single pulse I R =25W 12 A AS G,min V Gate source voltage - 20 V GS P T =25C Power dissipation 42 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg Rev. 1.0 page 1 2019-04-01 IAUC60N04S6N044 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics R Thermal resistance, junction - case - - - 3.6 K/W thJC Thermal resistance, junction - 2 3) R - - 50 thJA 6 cm cooling area ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 40 - - V (BR)DSS GS D V V =V , I =14A Gate threshold voltage 2.2 2.6 3.0 GS(th) DS GS D V =40V, V =0V, DS GS I Zero gate voltage drain current - - 1 A DSS T =25C j V =40V, V =0V, DS GS - - 5 2) T =125C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =7V, I =30A - 4.36 6.40 m W DS(on) GS D V =10V, I =30A - 3.53 4.52 GS D Rev. 1.0 page 2 2019-04-01