IAUS300N08S5N012 OptiMOS-5 Power-Transistor Product Summary V 80 V DS R 1.2 mW DS(on) I 300 A D Features H-PSOG-8-1 N-channel - Enhancement mode AEC qualified Tab MSL1 up to 260C peak reflow 8 Tab 175C operating temperature 1 Green product (RoHS compliant) 1 Ultra low Rds(on) 8 100% Avalanche tested Type Package Marking IAUS300N08S5N012 PG-HSOG-8-1 A08S5N12 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) Continuous drain current I 300 A T =25C, V =10V D C GS T =100C, C 300 2) V =10V GS 2) I T =25C 1200 Pulsed drain current D,pulse C 2) E I =150A 817 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 300 A AS V Gate source voltage - 20 V GS Power dissipation P T =25C 375 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 4/10/2018IAUS300N08S5N012 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 0.4 K/W thJC Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V =0V, GS 2) V 80 - - V Drain-source breakdown voltage (BR)DSS I =1mA D Gate threshold voltage V V =V , I =275A 2.2 3 3.8 GS(th) DS GS D V =80V, V =0V, DS GS 2) I - 0.1 1 A Zero gate voltage drain current DSS T =25C j V =50V, V =0V, DS GS - 1 20 2) T =85C j Gate-source leakage current I V =20V, V =0V - - 100 nA GSS GS DS R V =6V, I =75A Drain-source on-state resistance - 1.3 1.7 m DS(on) GS D V =10V, I =100A - 1.0 1.2 GS D Rev. 1.0 page 2 4/10/2018