IAUS300N10S5N015T OptiMOS -5 Power-Transistor Product Summary V 100 V DS R 1.5 m W DS(on) Features I 300 A D OptiMOS power MOSFET for automotive applications PG-HDSOP-16-2 N-channel Enhancement mode Normal Level Extended qualification beyond AEC-Q101 Enhanced electrical testing Robust design MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IAUS300N10S5N015T PG-HDSOP-16-2 5N10015 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit V =10 V, Chip GS I Continuous drain current 350 A D 1,2) limitation V =10V, DC GS 300 3) current T =85 C, V =10V, a GS 103 2,4) R on 2s2p thJA 2) I T =25 C, t = 100 s 1272 Pulsed drain current D,pulse C p 2) E I =150A 652 mJ Avalanche energy, single pulse AS D I - Avalanche current, single pulse 300 A AS Gate source voltage V - 20 V GS P T =25C Power dissipation 375 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2020-10-01 IAUS300N10S5N015T Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Top - - 0.4 K/W R Thermal resistance, junction - case Bottom (Pin 1-7) - 9 - thJC Bottom (Pin 9-16) - 3 - Top - 2.8 - Thermal resistance, junction - R thJA 4) ambient Bottom (through PCB) - 40 - Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V =0V, GS Drain-source breakdown voltage V 100 - - V (BR)DSS I =1mA D V V =V , I =275A Gate threshold voltage 2.2 3.0 3.8 GS(th) DS GS D V =100V, V =0V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25C j V =50V, V =0V, DS GS - 1 20 2) T =85C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =6V, I =75A - 1.6 2.1 m DS(on) GS D V =10V, I =100A - 1.3 1.5 GS D 2) R - - 1.5 - W Gate resistance G Rev. 1.0 page 2 2020-10-01