IAUT300N10S5N015 OptiMOS-5 Power-Transistor Product Summary V 100 V DS R 1.5 m DS(on) I 300 A D Features P/G-HSOF-8-1 N-channel - Enhancement mode Tab AEC qualified 8 MSL1 up to 260C peak reflow 1 Tab 175C operating temperature Green product (RoHS compliant) 1 8 Ultra low Rds(on) 100% Avalanche tested Type Package Marking IAUT300N10S5N015 P/G-HSOF-8-1 5N10015 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I Continuous drain current T =25C, V =10V 300 A D C GS T =100 C, C 247 2) V =10 V GS 2) I T =25 C 1200 Pulsed drain current D,pulse C 2) E I =150 A 652 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 300 A AS V Gate source voltage -20V GS P T =25 C Power dissipation 375 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2017-10-02IAUT300N10S5N015 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R---0.4K/W thJC Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V =0 V, GS Drain-source breakdown voltage V 100 - - V (BR)DSS I =1 mA D Gate threshold voltage V V =V , I =275 A 2.2 3.0 3.8 GS(th) DS GS D V =100 V, V =0 V, DS GS I Zero gate voltage drain current -0.1 1 A DSS T =25 C j V =50 V, V =0 V, DS GS -1 20 2) T =85 C j Gate-source leakage current I V =20 V, V =0 V - - 100 nA GSS GS DS R Drain-source on-state resistance V =6 V, I =75 A -1.6 2.0m DS(on) GS D V =10 V, I =100 A -1.3 1.5 GS D Rev. 1.0 page 2 2017-10-02