IAUZ30N06S5L140 OptiMOS -5 Power Transistor Product Summary V 60 V DS Features R 14 m W DS(on),max OptiMOS power MOSFET for automotive applications I 30 A D N-channel - Enhancement mode - Logic level MSL1 up to 260C peak reflow PG-TSDSON-8-32 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking PG-TSDSON-8-32 IAUZ30N06S5L140 5N6L140 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit V =10 V, Chip GS I Drain current 30 A D 1,2) limitation V =10V, DC current 30 GS T =85 C, V =10V, a GS 8 2,3) R on 2s2p thJA 2) I T =25 C, t = 100 s 85 Pulsed drain current D,pulse C p 2) E I =15 A 27 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 30 A AS V Gate source voltage - 16 V GS P T =25 C Power dissipation 33 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg Rev. 1.0 page 1 2020-05-07 IAUZ30N06S5L140 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics R Thermal resistance, junction - case - - - 4.6 K/W thJC Thermal resistance, junction - R - - 37.2 - thJA 3) ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =1mA 60 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =10A 1.2 1.7 2.2 GS(th) DS GS D V =60V, V =0V, DS GS Zero gate voltage drain current I - - 1 A DSS T =25C j V =60V, V =0V, DS GS - - 100 1) T =125C j Gate-source leakage current I V =16V, V =0V - - 100 nA GSS GS DS R V =4.5V, I =15A Drain-source on-state resistance - 16.3 19.6 m W DS(on) GS D V =10V, I =15A - 11.2 14 GS D 2) R - - 1.4 - W Gate resistance G Rev. 1.0 page 2 2020-05-07