IAUZ40N06S5N050 OptiMOS -5 Power Transistor Product Summary V 60 V DS Features R 5 m W DS(on),max OptiMOS power MOSFET for automotive applications I 40 A D N-channel - Enhancement mode - Normal level MSL1 up to 260C peak reflow PG-TSDSON-8-33 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IAUZ40N06S5N050 PG-TSDSON-8-33 5N06050 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit V =10 V, Chip GS I Drain current 86 A D 1,2) limitation V =10V, DC GS 40 3) current T =85 C, V =10V, a GS 14 2,4) R on 2s2p thJA 2) I T =25 C, t = 100 s 241 Pulsed drain current D,pulse C p 2) E I =20 A 115 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 40 A AS V Gate source voltage - 20 V GS P T =25 C Power dissipation 71 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg Rev. 1.1 page 1 2021-03-18 IAUZ40N06S5N050 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics R Thermal resistance, junction - case - - - 2.1 K/W thJC Thermal resistance, junction - R - - 35.5 - thJA 4) ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =1mA 60 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =29A 2.2 2.8 3.4 GS(th) DS GS D V =60V, V =0V, DS GS Zero gate voltage drain current I - - 1 A DSS T =25C j V =60V, V =0V, DS GS - - 100 1) T =125C j Gate-source leakage current I V =20V, V =0V - - 100 nA GSS GS DS R V =7V, I =10A Drain-source on-state resistance - 5.0 6.0 m W DS(on) GS D V =10V, I =20A - 4.0 5.0 GS D 2) R - - 1.5 - W Gate resistance G Rev. 1.1 page 2 2021-03-18