IAUZ40N10S5N130 OptiMOS -5 Power-Transistor Product Summary V 100 V DS R 13 m W DS(on),max I 40 A D Features PG-TSDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified 1 MSL1 up to 260C peak reflow 175C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Type Package Marking IAUZ40N10S5N130 PG-TSDSON-8-33 5N1N130 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 1)2) I T =25C, V =10V 40 A Continuous drain current D C GS T =100C, V =10V 35 C GS 2) I T =25C 160 Pulsed drain current D,pulse C 2) E I =20A 60 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 22 A AS V Gate source voltage - 20 V GS T =25C C Power dissipation P 68 W tot T =175C J Operating and storage temperature T , T - -55 ... +175 C j stg Rev. 1.0 page 1 2019-07-23 IAUZ40N10S5N130 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics R Thermal resistance, junction - case - - - 2.2 K/W thJC Thermal resistance, junction - 2 3) R - - 62 thJA 6 cm cooling area ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 100 - - V (BR)DSS GS D V V =V , I =27A Gate threshold voltage 2.2 3.0 3.8 GS(th) DS GS D V =100V, V =0V, DS GS I Zero gate voltage drain current - - 1 A DSS T =25C j V =100V, V =0V, DS GS - - 100 2) T =125C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =6V, I =10A - 14 17 m W DS(on) GS D V =10V, I =20A - 10.8 13 GS D 2) R - 1.2 - W Gate resistance G Rev. 1.0 page 2 2019-07-23