X-On Electronics has gained recognition as a prominent supplier of IGT60R190D1SATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IGT60R190D1SATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IGT60R190D1SATMA1 Infineon

Name: IGT60R190D1SATMA1
Brand: Infineon
SKU: IGT60R190D1SATMA1_Infineon
Availability: InStock
Rating: 5 (11 reviews)

IGT60R190D1SATMA1 electronic component of Infineon

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See Product Specifications

Part No.	IGT60R190D1SATMA1
Manufacturer:	Infineon
Category:	MOSFETs
Description:	Transistor: N-JFET; CoolGaN™; unipolar; 600V; 12.5A; Idm:23A; 55.5W
Datasheet:	IGT60R190D1SATMA1 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

22: USD 2.9497 ea
Line Total: USD 64.89

Availability - 1
Ship by Fri. 07 Mar to Thu. 13 Mar

MOQ: 22 Multiples: 1
Pack Size: 1

IGT60R190D1SATMA1 More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

1

Ship by Fri. 07 Mar to Thu. 13 Mar

MOQ : 22
Multiples : 1

22 : USD 2.9497

5

Ship by Wed. 05 Mar to Fri. 07 Mar

MOQ : 1
Multiples : 1

1 : USD 14.49
2 : USD 12.6
4 : USD 11.914

Specifications

Manufacturer

Infineon Infineon

Product Category

MOSFETs MOSFETs

Id - Continuous Drain Current

12.5 A 12.5 A

Vds - Drain-Source Breakdown Voltage

600 V 600 V

Rds On - Drain-Source Resistance

190 mOhms 190 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

900 mV 900 mV

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

55.5 W 55.5 W

Mounting Style

SMD/SMT SMD/SMT

Package / Case

HSOF - 8 HSOF - 8

Packaging

Coolgan , Cut Tape , Reel Coolgan , Cut Tape , Reel

Technology

GaN GaN

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

- 10 V , + 10 V - 10 V , + 10 V

Qg - Gate Charge

3.2 nC 3.2 nC

Channel Mode

Enhancement Enhancement

Tradename

CoolGaN CoolGaN

Hts Code

8541290095 8541290095

Notes:- Show Stocked Products With Similar Attributes.

IGT60R190D1SATMA1 Alternative Parts

We are delighted to provide the IGT60R190D1SATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IGT60R190D1SATMA1 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The IGT60R190D1SATMA1 is a N-JFET Transistor manufactured by Infineon and is part of the CoolGaN™ family of devices. It is a unipolar transistor, meaning it only requires a single power source, and is rated for 600V and up to 12.5A of continuous current. Its peak current rating (Idm) is 23A, with a maximum power dissipation of 55.5W. This robust component is capable of operating in a wide range of temperature, and offers low gate charge, low on-resistance and optimized switching performance.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
1 Ship by Fri. 07 Mar to Thu. 13 Mar MOQ : 22 Multiples : 1	22 : USD 2.9497

5 Ship by Wed. 05 Mar to Fri. 07 Mar MOQ : 1 Multiples : 1	1 : USD 14.49 2 : USD 12.6 4 : USD 11.914

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