X-On Electronics has gained recognition as a prominent supplier of IKW25T120 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IKW25T120 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IKW25T120 Infineon

Name: IKW25T120
Brand: Infineon
SKU: IKW25T120_Infineon
Availability: InStock
Rating: 5 (11 reviews)

Hot

IKW25T120 electronic component of Infineon

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Part No.	IKW25T120
Manufacturer:	Infineon
Category:	IGBT Transistors
Description:	IGBT Transistors LOW LOSS DuoPack 1200V 25A
Datasheet:	IKW25T120 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 7.0875 ea
Line Total: USD 7.09

Availability - 1099
Ship by Mon. 07 Apr to Wed. 09 Apr

MOQ: 1 Multiples: 1
Pack Size: 1

IKW25T120 More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

22

Ship by Wed. 16 Apr to Mon. 21 Apr

MOQ : 1
Multiples : 1

1 : USD 7.3612
10 : USD 4.9271
30 : USD 4.4678
90 : USD 4.0838

1099

Ship by Mon. 07 Apr to Wed. 09 Apr

MOQ : 1
Multiples : 1

1 : USD 7.0875
10 : USD 5.445
25 : USD 4.994
100 : USD 4.664
240 : USD 4.433
480 : USD 4.213
1200 : USD 3.993
2640 : USD 3.982

42

Ship by Mon. 07 Apr to Wed. 09 Apr

MOQ : 1
Multiples : 1

1 : USD 7.322
3 : USD 6.706
4 : USD 5.25
10 : USD 4.97
120 : USD 4.9

Specifications

Manufacturer

Infineon Infineon

Product Category

IGBT Transistors IGBT Transistors

RoHS - XON

Y Y

Configuration

Single Single

Collector- Emitter Voltage VCEO Max

1200 V 1200 V

Collector-Emitter Saturation Voltage

1.7 V 1.7 V

Maximum Gate Emitter Voltage

+/- 20 V +/- 20 V

Continuous Collector Current at 25 C

50 A 50 A

Gate-Emitter Leakage Current

600 nA 600 nA

Package / Case

TO - 247 - 3 TO - 247 - 3

Packaging

Tube Tube

Technology

Si Si

Mounting Style

Through Hole Through Hole

Technology

Si Si

Pd - Power Dissipation

190 W 190 W

Minimum Operating Temperature

- 40 C - 40 C

Maximum Operating Temperature

+ 150 C + 150 C

Series

Ikw25t120 Ikw25t120

Continuous Collector Current Ic Max

50 A 50 A

Brand

Infineon Technologies Infineon Technologies

Factory Pack Quantity :

240 240

Height

21 mm 21 mm

Length

15.8 mm 15.8 mm

Width

5 mm 5 mm

Cnhts

8541290000 8541290000

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Igbt Transistors Igbt Transistors

Subcategory

Igbts Igbts

Taric

8541290000 8541290000

Tradename

Trenchstop Trenchstop

Notes:- Show Stocked Products With Similar Attributes.

IKW25T120 Alternative Parts

We are delighted to provide the IKW25T120 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IKW25T120 and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

IKW25T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Approx. 1.0V reduced V CE(sat) and 0.5V reduced V compared to BUP314D F Short circuit withstand time 10 s G E Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution PG-TO-247-3 - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in V CE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel Emitter Controlled HE diode 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IKW25T120 TrenchStop Series Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 2 Rev. 2.3 12.06.2013 IFAG IPC TD VLS

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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CYP may also be referenced as

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INF
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Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
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INTL RECTIFIER
IR
IRH
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Availability	Price	Buy Price	Quantity
22 Ship by Wed. 16 Apr to Mon. 21 Apr MOQ : 1 Multiples : 1	1 : USD 7.3612 10 : USD 4.9271 30 : USD 4.4678 90 : USD 4.0838

1099 Ship by Mon. 07 Apr to Wed. 09 Apr MOQ : 1 Multiples : 1	1 : USD 7.0875 10 : USD 5.445 25 : USD 4.994 100 : USD 4.664 240 : USD 4.433 480 : USD 4.213 1200 : USD 3.993 2640 : USD 3.982

42 Ship by Mon. 07 Apr to Wed. 09 Apr MOQ : 1 Multiples : 1	1 : USD 7.322 3 : USD 6.706 4 : USD 5.25 10 : USD 4.97 120 : USD 4.9

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