X-On Electronics has gained recognition as a prominent supplier of IMW120R045M1XKSA1 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. IMW120R045M1XKSA1 SiC MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

IMW120R045M1XKSA1 Infineon

IMW120R045M1XKSA1 electronic component of Infineon
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Part No.IMW120R045M1XKSA1
Manufacturer: Infineon
Category: SiC MOSFETs
Description: SiC MOSFETs Y
Datasheet: IMW120R045M1XKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 16.5848 ea
Line Total: USD 16.58 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 16.6903
10 : USD 16.3565
100 : USD 16.3565
480 : USD 16.3565

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 45.3506
10 : USD 40.1982
100 : USD 33.9494
500 : USD 30.2005

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 16.5848
5 : USD 15.086
10 : USD 14.2015
50 : USD 13.6159
100 : USD 12.2062
250 : USD 11.9621

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 19.8936
10 : USD 18.2952
120 : USD 15.7896

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 25.5645
2 : USD 24.1803
3 : USD 24.1668

   
Manufacturer
Product Category
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Package / Case
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IMW120R045M1XKSA1 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IMW120R045M1XKSA1 and other electronic components in the SiC MOSFETs category and beyond.

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IMW120R045M1 IMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drain Features pin 2 Very low switching losses Gate pin 1 Threshold-free on state characteristic Wide gate-source voltage range Source pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage Fully controllable dv/dt Commutation robust body diode, ready for synchronous rectification Temperature independent turn-off switching losses Benefits Efficiency improvement Enabling higher frequency Increased power density Cooling effort reduction Reduction of system complexity and cost Potential applications Energy generation o Solar string inverter and solar optimizer Industrial power supplies o Industrial UPS o Industrial SMPS Infrastructure Charge o Charger Product validation Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Table 1 Key Performance and Package Parameters Type V I R T Marking Package DS D DS(on) j,max (TC = 25C, Rth(j-c,max)) (Tvj = 25C, ID = 20A, VGS = 15V) IMW120R045M1 1200V 52A 45m 175C 120M1045 PG-TO247-3 Datasheet Please read the Important Notice and Warnings at the end of this document 2.6 www.infineon.com page 1 of 17 2020-12-11 IMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Ta ble of contents 1200V SiC Trench MOSFET Table of contents Features ........................................................................................................................................ 1 Benefits ......................................................................................................................................... 1 Potential applications ..................................................................................................................... 1 Product validation .......................................................................................................................... 1 Table of contents ............................................................................................................................ 2 1 Maximum ratings ................................................................................................................... 3 2 Thermal resistances ............................................................................................................... 4 3 Electrical Characteristics ........................................................................................................ 5 3.1 Static characteristics ............................................................................................................................... 5 3.2 Dynamic characteristics .......................................................................................................................... 6 3.3 Switching characteristics ........................................................................................................................ 7 4 Electrical characteristic diagrams ............................................................................................ 8 5 Package drawing ................................................................................................................... 14 6 Test conditions ..................................................................................................................... 15 Revision history............................................................................................................................. 16 Datasheet 2 of 17 2.6 2020-12-11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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