X-On Electronics has gained recognition as a prominent supplier of IMW120R090M1HXKSA1 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. IMW120R090M1HXKSA1 SiC MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

IMW120R090M1HXKSA1 Infineon

IMW120R090M1HXKSA1 electronic component of Infineon
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Part No.IMW120R090M1HXKSA1
Manufacturer: Infineon
Category: SiC MOSFETs
Description: SiC MOSFETs Y
Datasheet: IMW120R090M1HXKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.2829 ea
Line Total: USD 6.28 
Availability - 208
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
208
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 6.2829
10 : USD 6.1165
25 : USD 5.3625
60 : USD 5.2663
120 : USD 5.1168

   
Manufacturer
Product Category
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Package / Case
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IMW120R090M1HXKSA1 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IMW120R090M1HXKSA1 and other electronic components in the SiC MOSFETs category and beyond.

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IMW120R090M1H IMW120R090M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drain pin 2 Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully controllable dV/dt Robust body diode for hard commutation Temperature independent turn-off switching losses Benefits Efficiency improvement Enabling higher frequency Increased power density Cooling effort reduction Reduction of system complexity and cost Potential applications Energy generation o Solar string inverter and solar optimizer Industrial power supplies o Industrial UPS o Industrial SMPS Infrastructure Charge o Charger Product validation Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Table 1 Key Performance and Package Parameters Type V I R T Marking Package DS D DS(on) vj,max TC = 25C, Rth(j-c,max) Tvj = 25C, ID = 8.5A, VGS = 18V IMW120R090M1H 1200V 26A 90m 175C 12M1H090 PG-TO247-3 Datasheet Please read the Important Notice and Warnings at the end of this document 2.2 www.infineon.com page 1 of 17 2020-12-11 IMW120R090M1H CoolSiC 1200V SiC Trench MOSFET Ta ble of contents 1200V SiC Trench MOSFET Table of contents Features ........................................................................................................................................ 1 Benefits ......................................................................................................................................... 1 Potential applications ..................................................................................................................... 1 Product validation .......................................................................................................................... 1 Table of contents ............................................................................................................................ 2 1 Maximum ratings ................................................................................................................... 3 2 Thermal resistances ............................................................................................................... 4 3 Electrical Characteristics ........................................................................................................ 5 3.1 Static characteristics ............................................................................................................................... 5 3.2 Dynamic characteristics .......................................................................................................................... 6 3.3 Switching characteristics ........................................................................................................................ 7 4 Electrical characteristic diagrams ............................................................................................ 8 5 Package drawing ................................................................................................................... 14 6 Test conditions ..................................................................................................................... 15 Revision history............................................................................................................................. 16 Datasheet 2 of 17 2.2 2020-12-11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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