Type IPA032N06N3 G TM OptiMOS 3 Power-Transistor Product Summary Features V 60 V DS Ideal for high frequency switching and sync. rec. R 3.2 mW DS(on),max Optimized technology for DC/DC converters I 84 A D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating RoHS compliant 1) Qualified according to JEDEC for target applications Halogen-free according to IEC61249-2-21 Type IPA032N06N3 G Package PG-TO220-3-31 Marking 032N06N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C Continuous drain current 84 A D C T =100C 60 C 2) I T =25C 336 Pulsed drain current D,pulse C 3) E I =100A, R =25W 235 mJ Avalanche energy, single pulse AS D GS V Gate source voltage 20 V GS Power dissipation P T =25C 41 W tot C T , T Operating and storage temperature -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Rev. 2.0 page 1 2013-08-27IPA032N06N3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 3.7 K/W thJC Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 60 - - V (BR)DSS GS D V V =V , I =118A Gate threshold voltage 2 3 4 GS(th) DS GS D V =60V, V =0V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25C j V =60V, V =0V, DS GS - 10 100 T =125C j I V =20V, V =0V Gate-source leakage current - 1 100 nA GSS GS DS R V =10V, I =80A Drain-source on-state resistance - 2.6 3.2 mW DS(on) GS D Gate resistance R - 1.3 - W G V >2 I R , DS D DS(on)max Transconductance g 68 135 - S fs I =80A D 4) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.0 page 2 2013-08-27