IPA086N10N3GXKSA1 Infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS Power-Transistor, 100V OptiMOS3 Power-Transistor IPA086N10N3 G Data Sheet Rev. 2.4 Final Power Management & MultimarketIPA086N10N3 G TM OptiMOS 3 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 8.6 mW DS(on),max Excellent gate charge x R product (FOM) DS(on) I 45 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 Fully isolated package (2500 VAC 1 minute) Type IPA086N10N3 G Package PG-TO220-FP Marking 086N10N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 2) I Continuous drain current T =25C 45 A D C T =100C 32 C 2) I T =25C 180 Pulsed drain current D,pulse C E Avalanche energy, single pulse I =45A, R =25W 170 mJ AS D GS V Gate source voltage 20 V GS P T =25C Power dissipation 37.5 W tot C Operating and storage temperature T , T -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 2) See figure 3 Rev. 2.4 page 1 2015-08-26