Type IPA093N06N3 G TM OptiMOS 3 Power-Transistor Product Summary Features V 60 V DS Ideal for high frequency switching and sync. rec. R 9.3 mW DS(on),max Optimized technology for DC/DC converters I 43 A D Excellent gate charge x R product (FOM) DS(on) N-channel, normal level 100% avalanche tested Pb-free plating RoHS compliant 1) Qualified according to JEDEC for target applications Type IPA093N06N3 G Package PG-TO220 FP Marking 093N06N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C Continuous drain current 43 A D C T =100C 31 C 2) I T =25C 172 Pulsed drain current D,pulse C 3) E I =50A, R =25W 43 mJ Avalanche energy, single pulse AS D GS V Gate source voltage 20 V GS Power dissipation P T =25C 33 W tot C T , T Operating and storage temperature -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Rev. 2.1 page 1 2017-01-12IPA093N06N3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 4.6 K/W thJC Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =1mA 60 - - V (BR)DSS GS D V V =V , I =34A Gate threshold voltage 2 3 4 GS(th) DS GS D V =60V, V =0V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25C j V =60V, V =0V, DS GS - 10 100 T =125C j I V =20V, V =0V Gate-source leakage current - 1 100 nA GSS GS DS R V =10V, I =40A Drain-source on-state resistance - 7.8 9.3 mW DS(on) GS D Gate resistance R - 0.9 - W G V >2 I R , DS D DS(on)max g Transconductance 26 51 - S fs I =40A D Rev. 2.1 page 2 2017-01-12