IPA50R140CP TM CoolMOS Power Transistor Product Summary Features V 8M ..) O 0 Sj W4EHB:M : 8 IJ/ D1, =a R ) *-) =a % Sj W)EM IJ< =KH E<C H J/ N. ,+ Y Q -1 < Y%fkb W2BJH7BEM=7J 9>7H= NJH C :L :JH7J : W% =>F 7A9KHH DJ97F78 B JO 1, - W-8 <H B 7:FB7J D= /E%09ECFB 7DJ ) W.K7B < : 799EH: D=JE CoolMOS CP isdesigned for: W%7H:7D:IE<JIM J9> D=0*-0<EHI HL HFEM HIKFFB I W *- <EH 15 +EJ 8EEA7:7FJ H - -7D:) 13 W-4*IJ7= I<EH0 HL H :7FJ H Type Package Marking BI9.)K*-)<I I &MH++) I .K*-)I Maximumratings,7JT Z KDB IIEJ> HM I IF 9 < : Parameter Symbol Conditions Value Unit * I T Z +, 9 EDJ DKEKI:H7 D9KHH DJ = < T Z *. < + ./ I T Z -KBI ::H7 D9KHH DJ =%bg eW < L7B7D9> D H=O I D=B FKBI E I V 3 /*/ C 9L = == + %, E I V 3 ) 2, L7B7D9> D H=O H F J J L t 9K = == 9K + %, I 2 , 9 L7B7D9> 9KHH DJ H F J J L t 9K 9K V 3 *,01:v(VtHK== :D II :v(Vt .) O( e =L V 7J IEKH9 LEBJ7= efSf U w+) O L < %P w,) P T Z -EM H: II F7J ED ,- P faf < T T ,F H7J D=7D:IJEH7= J CF H7JKH v< efY *EKDJ D=JEHGK * I9H MI +9C Rev. 2.2 Page 1 2018-02-14IPA50R140CP Maximumratings,7JT Z KDB IIEJ> HM I IF 9 < : Parameter Symbol Conditions Value Unit * I *- 9 EDJ DKEKI: E: <EHM7H:9KHH DJ L T Z < + I ./ E: FKBI 9KHH DJ L%bg eW - Vv(Vt *. O( e / L HI : E: :v(Vt Parameter Symbol Conditions Values Unit min. typ. max. Thermalcharacteristics R 1> HC7BH I IJ7D9 KD9J ED 97I & & , /. D(P fZC< 1> HC7BH I IJ7D9 KD9J ED R WSVWV & & /+ fZC9 S T W f 0EB: H D=J CF H7JKH CC D T & & +/) v< ea V M7L IEB: H D=EDBO7BBEM :7JB 7:I <HEC97I <EH I Electrical characteristics,7JT Z KDB IIEJ> HM I IF 9 < : Staticcharacteristics V V 3 I H7 D IEKH9 8H 7A:EMDLEBJ7= .)) & & O K =LL L = 7J J>H I>EB:LEBJ7= V V 6V I C + . , , . fZ =L L = V 3 V 3 =L L I 6 HE=7J LEBJ7= :H7 D9KHH DJ & & + x9 =LL T Z V 3 V 3 =L L & +) & T Z 7J IEKH9 B 7A7= 9KHH DJ I V 3 V 3 & & *)) 9 LL L =L V 3 I L = R H7 D IEKH9 ED IJ7J H I IJ7D9 & ) *, ) *- =a T Z V 3 I L = & ) ,+ & T Z R 7J H I IJ7D9 f *%P EF D:H7 D Rev. 2.2 Page 2 2018-02-14