IPA50R140CP TM CoolMOS Power Transistor Product Summary Features V 8M ..) O 0 Sj W 4 EHB: M : 8 IJ / D 1, =a R ) *-) =a % Sj W )EM IJ < =KH E< C H J / N . , + Y Q -1 < Y%fkb W 2 BJH7 BEM =7J 9>7H= W NJH C : L : J H7J : W % => F 7A 9KHH DJ 97F78 B JO 1, - W -8 <H B 7: FB7J D= / E% 0 9EC FB 7DJ ) W . K7B < : 799EH: D= JE CoolMOS CP is designed for: W % 7H: 7D: IE<JIM J9> D= 0* -0 <EH I HL H FEM H IKFFB I W * - <EH 15 + EJ 8EEA 7: 7FJ H - - 7D: ) 13 W -4 * IJ7= I <EH 0 HL H : 7FJ H Type Package Marking BI9.)K*-)<I I &MH++) I .K*-)I Maximum ratings, 7J T Z KDB II EJ> HM I IF 9 < : Parameter Symbol Conditions Value Unit * I T Z +, 9 EDJ DKEKI : H7 D 9KHH DJ = < *. T Z < + ./ I T Z -KBI : : H7 D 9KHH DJ =%bg eW < L7B7D9> D H=O I D=B FKBI E I V 3 /*/ C 9L = == + %, E I V 3 ) 2, L7B7D9> D H=O H F J J L t 9K = == 9K + %, L7B7D9> 9KHH DJ H F J J L t I 2 , 9 9K 9K V 3 * , 0 1 : v (Vt HK== : D II : v (Vt .) O( e =L V 7J IEKH9 LEBJ7= efSf U w+) O L < % P w,) P T Z -EM H : II F7J ED ,- P faf < T T , F H7J D= 7D: IJEH7= J C F H7JKH v< efY * EKDJ D= JEHGK * I9H MI + 9C / L F7= IPA50R140CP Maximum ratings, 7J T Z KDB II EJ> HM I IF 9 < : Parameter Symbol Conditions Value Unit * I *- 9 EDJ DKEKI : E: <EHM7H: 9KHH DJ L T Z < + I ./ E: FKBI 9KHH DJ L%bg eW - Vv (Vt *. O( e / L HI : E: : v (Vt Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics R 1> HC 7B H I IJ7D9 KD9J ED 97I & & , /. D(P fZC< 1> HC 7B H I IJ7D9 KD9J ED R WSVWV & & /+ fZC9 S T W f 0EB: H D= J C F H7JKH C C D T & & +/) v< ea V M7L IEB: H D= EDBO 7BBEM : 7J B 7: I <HEC 97I <EH I Electrical characteristics, 7J T Z KDB II EJ> HM I IF 9 < : Static characteristics V V 3 I H7 D IEKH9 8H 7A: EMD LEBJ7= .)) & & O K =LL L = 7J J>H I>EB: LEBJ7= V V 6V I C + . , , . fZ =L L = V 3 V 3 =L L 6 HE =7J LEBJ7= : H7 D 9KHH DJ I & & + x9 =LL T Z V 3 V 3 =L L & +) & T Z 7J IEKH9 B 7A7= 9KHH DJ I V 3 V 3 & & *)) 9 LL L =L V 3 I L = R H7 D IEKH9 ED IJ7J H I IJ7D9 & ) *, ) *- =a T Z V 3 I L = & ) ,+ & T Z R 7J H I IJ7D9 f * % P EF D : H7 D / L F7=