MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.2 Final Power Management & Multimarket600VCoolMOE6 Power Transistor IPD60R600E6, IPP60R600E6 IPA60R600E6 1 Description CoolMO is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMO E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applicationseven more efficient, morecompact,lighter,andcooler. Features Extremely low losses due to very low FOM Rdson*Qgand Eoss drain Very high commutation ruggedness pin 2 Easy to use/drive 1) JEDEC qualified, Pb-free plating, halogen free (excluding gate TO-252) pin 1 Applications source pin 3 PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthe gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 650 V DS j,max R 0.6 DS(on),max Q 20.5 nC g,typ I 19 A D,pulse E 400V 1.9 J oss Body diode di/dt 500 A/s Type / Ordering Code Package Marking Related Links IPD60R600E6 PG-TO252 IFX CoolMOS Webpage IPP60R600E6 PG-TO220 6R600E6 IFX Designtools IPA60R600E6 PG-TO220 FullPAK 1) J-STD20and JESD22 FinalData Sheet 2 Rev. 2.0, 2010-04-12 Rev. 2.2, 2014-12-10