X-On Electronics has gained recognition as a prominent supplier of IPA80R1K0CE MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPA80R1K0CE MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPA80R1K0CE Infineon

Name: IPA80R1K0CE
Brand: Infineon
SKU: IPA80R1K0CE_Infineon
Availability: InStock
Rating: 5 (11 reviews)

IPA80R1K0CE electronic component of Infineon

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See Product Specifications

Part No.	IPA80R1K0CE
Manufacturer:	Infineon
Category:	MOSFETs
Description:	800V 5.7A 950mO@10V,3.6A 32W N Channel TO-220F-3 MOSFETs ROHS
Datasheet:	IPA80R1K0CE Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

143: USD 0.8481 ea
Line Total: USD 121.28

Availability - 281
Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ: 143 Multiples: 1
Pack Size: 1

IPA80R1K0CE More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

281

Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ : 143
Multiples : 1

143 : USD 0.8481

4

Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ : 1
Multiples : 1

1 : USD 1.7824
10 : USD 1.5305
50 : USD 1.372
100 : USD 1.2099
500 : USD 1.1374
1000 : USD 1.105

Specifications

Manufacturer
Infineon Infineon

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
TO - 220FP TO - 220FP

Brand Category
Infineon Infineon

Fet Type
N Channel N Channel

Drain To Source Voltagevdss
800 V 800 V

Continuous Drain Current Id @ 25°C
5.7 A (T C) 5.7 A (T C)

Vgsth Max @ Id
3.9V @ 250uA 3.9V @ 250uA

Rds On Max @ Id Vgs
950mO @ 3.6A,10V 950mO @ 3.6A,10V

Power Dissipation-Max Ta 25°C
32 W (Tc) 32 W (Tc)

Drain Source Voltage Vdss
800 V 800 V

Continuous Drain Current Id
5.7 A 5.7 A

Drain Source On Resistance Rdson@Vgs Id
950 mOhms @10V , 3.6A 950 mOhms @10V , 3.6A

Power Dissipation Pd
32 W 32 W

Gate Threshold Voltage Vgsth@Id
3.9 V @250uA 3.9 V @250uA

Type
N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

IPA80R1K0CE Alternative Parts

We are delighted to provide the IPA80R1K0CE from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPA80R1K0CE and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The IPA80R1K0CE is a N-Channel MOSFET manufactured by Infineon, and is a 3-pin TO-220F-3 RoHS compliant device. It features an 800V drain-source voltage rating, 5.7A continuous drain current, 950mO drain-source on-resistance @ 10V gate voltage, 3.6A continuous source current, and a maximum power dissipation of 32W.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
281 Ship by Fri. 06 Dec to Wed. 11 Dec MOQ : 143 Multiples : 1	143 : USD 0.8481

4 Ship by Fri. 06 Dec to Wed. 11 Dec MOQ : 1 Multiples : 1	1 : USD 1.7824 10 : USD 1.5305 50 : USD 1.372 100 : USD 1.2099 500 : USD 1.1374 1000 : USD 1.105

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