X-On Electronics has gained recognition as a prominent supplier of IPA80R360P7XKSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPA80R360P7XKSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPA80R360P7XKSA1 Infineon

IPA80R360P7XKSA1 electronic component of Infineon
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See Product Specifications
Part No.IPA80R360P7XKSA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET LOW POWER_NEW
Datasheet: IPA80R360P7XKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.926 ea
Line Total: USD 2.93 
Availability - 526
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
526
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 2.926
10 : USD 1.562
100 : USD 1.452
250 : USD 1.441
500 : USD 1.331
1000 : USD 1.166

56
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 2.828
9 : USD 1.904
25 : USD 1.792
100 : USD 1.736

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
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Series
Transistor Type
Brand
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Product Type
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Factory Pack Quantity :
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Cnhts
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IPA80R360P7XKSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPA80R360P7XKSA1 and other electronic components in the MOSFETs category and beyond.

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IPA80R360P7 MOSFET PG-TO 220 FP 800V CoolMOS P7 Power Device The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineons over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E reduced Q , C , and C DS(on) oss g iss oss Best-in-class DPAK R DS(on) Best-in-class V(GS)th of 3V and smallest V (GS)th variation of 0.5V Integrated Zener Diode ESD protection Fully qualified acc. JEDEC for Industrial Applications Fully optimized portfolio Drain Pin 2 Benefits *1 Gate Pin 1 Best-in-class performance *2 Enabling higher power density designs, BOM savings and lower assembly costs Source *1: Internal body diode *2: Integrated ESD diode Pin 3 Easy to drive and to parallel Better production yield by reducing ESD related failures Less production issues and reduced field returns Easy to select right parts for fine tuning of designs Potential applications Recommended for hard and soft switching flyback topologies for LED Lighting, low power Chargers and Adapters, Audio, AUX power and Industrial power. Also suitable for PFC stage in Consumer applications and Solar. Product validation Fully qualified according to JEDEC for Industrial Applications Please note: For MOSFET paralleling the use of ferrite beads on the gate or seperate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 800 V DS j=25C R 0.36 DS(on),max Q 30 nC g,typ I 13 A D E 500V 3.2 J oss VGS(th),typ 3 V ESD class (HBM) 2 - Type / Ordering Code Package Marking Related Links IPA80R360P7 PG-TO 220 FullPAK 80R360P7 see Appendix A Final Data Sheet 1 Rev. 2.2, 2020-01-27800V CoolMOS P7 Power Device IPA80R360P7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Test Circuits . 10 Package Outlines . 11 Appendix A 12 Revision History 13 Trademarks . 13 Disclaimer 13 Final Data Sheet 2 Rev. 2.2, 2020-01-27

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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