IPB010N06N MOSFET TM D-PAK 7pin OptiMOS Power-Transistor, 60 V Features Optimized for synchronous rectification tab 100% avalanche tested Superior thermal resistance N-channel, normal level 1) 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant 7 Halogen-free according to IEC61249-2-21 Table 1 Key Performance Parameters Drain Parameter Value Unit Pin 4, tab V 60 V DS Gate R 1.0 m DS(on),max Pin 1 I 180 A D Source Pin 2,3,5,6,7 Q 228 nC oss Q G(0V..10V) 208 nC Type / Ordering Code Package Marking Related Links IPB010N06N PG-TO263-7 010N06N - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.4, 2016-01-18TM OptiMOS Power-Transistor , 60 V IPB010N06N Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 11 Trademarks . 11 Disclaimer 11 Final Data Sheet 2 Rev. 2.4, 2016-01-18