IPB027N10N5ATMA1 Infineon

IPB027N10N5 MOSFET DPAK OptiMOS 5 Power-Transistor , 100 V Features Ideal for high frequency switching and sync. rec. Excellent gate charge x RDS(on) product (FOM) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating RoHS compliant 1) Qualified according to JEDEC for target applications Halogen-free according to IEC61249-2-21 Drain Table 1 Key Performance Parameters Pin 2, Tab Parameter Value Unit V 100 V DS Gate Pin 1 RDS(on),max 2.7 m Source Pin 3 I 166 A D Q 142 nC oss Q (0V..10V) 112 nC G Type / Ordering Code Package Marking Related Links IPB027N10N5 PG-TO 263-3 027N10N5 - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.4, 2017-07-11 OptiMOS 5 Power-Transistor, 100 V IPB027N10N5 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 11 Trademarks . 11 Disclaimer 11 Final Data Sheet 2 Rev. 2.4, 2017-07-11