Ie Q IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G %& 3 Power-Transistor Product Summary V .( J Features 9H R *&1 Q 451< 6 B 8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 , > =1H ,& I )*( 6 Q ( D9=9J54 D53 8> < 7I 6 B 3 >F5BD5BC 9 Q H3 5<<5>D 71D5 3 81B75 H R B 4E3 D ( & 9 Z Q .5BI < G > B5C9CD1>3 5 + 9 Z Q 3 81>>5< > B=1< <5F5< Q 1F1<1>3 85 D5CD54 Q )2 6B55 <1D9>7 + , 3 = <91>D ) Q * E1<96954 13 3 B49>7 D 6 B D1B75D 1 <93 1D9 >C Q 1< 75> 6B55 13 3 B49>7 D Type ) ) )) Package E=%ID*.+%+ E=%ID*.*%+ E=%ID**(%+ Marking (*1C(.C (+*C(.C (+*C(.C Maximum ratings, 1D T T E><5CC D85BG9C5 C 53 96954 V Parameter Symbol Conditions Value Unit * >D9>E EC 4B19> 3 EBB5>D I )*( 6 T T 9 8 T T )*( 8 + I T T ,0( )E<C54 4B19> 3 EBB5>D 9 aX Q 8 F1<1>3 85 5>5B7I C9>7<5 E<C5 E I R *+- Y 6H 9 =H 1D5 C EB3 5 F <D175 V q*( J =H ) G5B 49CC9 1D9 > P T T )00 K 8 ( 5B1D9>7 1>4 CD B175 D5= 5B1DEB5 T T T V S 3 <9=1D93 3 1D57 BI ) ,- 1>4 , * EBB5>D 9C <9=9D54 2 I 2 >4G9B5 G9D8 1> R % / D85 3 89 9C 12 <5 D 3 1BBI T 8 + ,55 69SEB5 6 B = B5 45D19<54 9>6 B=1D9 Z , ,55 697EB5 6 B = B5 45D19<54 9>6 B=1D9 > + 5F 175 IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics -85B=1< B5C9CD1>3 5 :E>3 D9 > 3 1C5 R % % (&0 A K T 8 -85B=1< B5C9CD1>3 5 R =9>9=1< 6 D B9>D T 6 - :E>3 D9 > 1=2 95>D % % ,( 3 =V 3 <9>7 1B51 Electrical characteristics, 1D T T E><5CC D85BG9C5 C 53 96954 V Static characteristics V V . I = B19> C EB3 5 2 B51 4 G> F <D175 .( % % J7G 9HH =H 9 V V 4V I W 1D5 D8B5C8 <4 F <D175 * + , = T 9H =H 9 V . V . 9H =H 05B 71D5 F <D175 4B19> 3 EBB5>D I % (&) * s6 9HH T T V V . V . 9H =H % *( *(( T T V I V . V . 1D5 C EB3 5 <51 175 3 EBB5>D % ) )(( Z6 =HH =H 9H R V . I B19> C EB3 5 > CD1D5 B5C9CD1>3 5 % *&. +&* 9 Z =H 9 V . I =H 9 % *&+ *&1HB9 1D5 B5C9CD1>3 5 R % )&+ % = gV g5*gI gR 9H 9 9 Z YMd g I MZ O ZPaO MZOQ /- ),1 % H R I 9 - * 5F93 5 > == H == H == 5 HI ) + G9D8 3 = >5 <1I5B W= D893 3 5B 1B51 6 B 4B19> 3 >>53 D9 > ) 9C F5BD93 1< 9> CD9<< 19B + 5F 175