IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS Ideal for high frequency switching and sync. rec. R 3.5 m DS(on),max Optimized technology for DC/DC converters I 100 A D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating RoHS compliant 1) Qualified according to JEDEC for target applications Halogen-free according to IEC61249-2-21 Type IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G Package PG-TO220-3 PG-TO262-3 PG-TO263-3 Marking 037N08N 037N08N 035N08N Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 2) I Continuous drain current T =25 C 100 A D C T =100 C 100 C 2) I T =25 C 400 Pulsed drain current D,pulse C 3) E I =100 A, R =25 510 mJ Avalanche energy, single pulse AS D GS V Gate source voltage 20 V GS Power dissipation P T =25 C 214 W tot C T , T Operating and storage temperature -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Rev. 2.4 page 1 2010-06-23IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 0.7 K/W thJC R Thermal resistance, minimal footprint - - 62 thJA 2 4) junction - ambient 6 cm cooling area -- 40 Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =1 mA 80 - - V (BR)DSS GS D V V =V , I =155 A Gate threshold voltage 2 2.8 3.5 GS(th) DS GS D V =80 V, V =0 V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25 C j V =80 V, V =0 V, DS GS - 10 100 T =125 C j I V =20 V, V =0 V Gate-source leakage current - 1 100 nA GSS GS DS R V =10 V, I =100 A Drain-source on-state resistance - 3.1 3.75 m DS(on) GS D =6 V, I =50 A V - 3.9 6.3 GS D R V =10 V, I =100 A - 2.8 3.5 DS(on) GS D Drain-source on-state resistance (SMD) V =6 V, I =50 A - 3.6 6.0 GS D R Gate resistance - 1.9 - G V >2 I R , DS D DS(on)max g Transconductance 75 149 - S fs I =100 A D 4) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.4 page 2 2010-06-23