IPB036N12N3 G %& 3 Power-Transistor Product Summary Features V )*( J 9H Q 451< 6 B 8978 6B5AE5>3 I CG9D3 89>7 1>4 3 >F5BD5BC R +&. 9 Z YMd Q H3 5<<5>D 71D5 3 81B75 H R B 4E3 D ( & 9 Z I )0( 6 9 Q .5BI < G > B5C9CD1>3 5 + 9 Z Q 3 81>>5< > B=1< <5F5< Q 1F1<1>3 85 D5CD54 Q )2 6B55 <1D9>7 + , 3 = <91>D ) Q * E1<96954 13 3 B49>7 D 6 B D1B75D 1 <93 1D9 >C Q 1< 75> 6B55 13 3 B49>7 D Type ) Package E=%ID*.+%/ Marking (+.C)*C Maximum ratings, 1D T T E><5CC D85BG9C5 C 53 96954 V Parameter Symbol Conditions Value Unit * I >D9>E EC 4B19> 3 EBB5>D T T )0( 6 9 8 T T )+1 8 * I T T )E<C54 4B19> 3 EBB5>D /*( 9 aX Q 8 + E I R F1<1>3 85 5>5B7I C9>7<5 E<C5 1(( Y 6H 9 =H V 1D5 C EB3 5 F <D175 q*( J =H P T T ) G5B 49CC9 1D9 > +(( K 8 ( 5B1D9>7 1>4 CD B175 D5= 5B1DEB5 T T T V S 3 <9=1D93 3 1D57 BI ) ,- 1>4 , * ,55 697EB5 6 B = B5 45D19<54 9>6 B=1D9 > + ,55 697EB5 6 B = B5 45D19<54 9>6 B=1D9 Z + 5F 175 IPB036N12N3 G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics -85B=1< B5C9CD1>3 5 :E>3 D9 > 3 1C5 R % % (&- A K T 8 -85B=1< B5C9CD1>3 5 R =9>9=1< 6 D B9>D T 6 * , :E>3 D9 > 1=2 95>D % % ,( 3 = 3 <9>7 1B51 Electrical characteristics, 1D T T E><5CC D85BG9C5 C 53 96954 V Static characteristics V V . I = B19> C EB3 5 2 B51 4 G> F <D175 )*( % % J7G 9HH =H 9 V V 4V I V 1D5 D8B5C8 <4 F <D175 * + , = T 9H =H 9 V . V . 9H =H 05B 71D5 F <D175 4B19> 3 EBB5>D I % (&) ) r6 9HH T T V V . V . 9H =H % )( )(( T T V I V . V . 1D5 C EB3 5 <51 175 3 EBB5>D % ) )(( Z6 =HH =H 9H R V . I B19> C EB3 5 > CD1D5 B5C9CD1>3 5 % *&1 +&. 9 Z =H 9 R 1D5 B5C9CD1>3 5 % )&, % = gV g5*gI gR 9H 9 9 Z YMd g I MZ O ZPaO MZOQ 10 )1- % H R I 9 , * 5F93 5 > == H == H == 5 HI ) + G9D8 3 = >5 <1I5B V = D893 3 5B 1B51 6 B 4B19> 3 >>53 D9 > ) 9C F5BD93 1< 9> CD9<< 19B + 5F 175