Data Sheet IPB160N04S4L-H1 TM OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.5 m DS(on) I 160 A D Features N-channel Logic Level - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB160N04S4L-H1 PG-TO263-7-3 4N04LH1 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I Continuous drain current T =25C, V =10V 160 A D C GS T =100 C, C 160 2) V =10 V GS 2) I T =25 C 640 Pulsed drain current D,pulse C E I =80 A Avalanche energy, single pulse 400 mJ AS D Avalanche current, single pulse I - 160 A AS V Gate source voltage - +20/-16 V GS P T =25 C Power dissipation 167 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2013-05-27Data Sheet IPB160N04S4L-H1 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R---0.9K/W thJC Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 40 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =110 A 1.2 1.7 2.2 GS(th) DS GS D V =40 V, V =0 V, DS GS I Zero gate voltage drain current -0.05 1 A DSS T =25 C j V =18 V, V =0 V, DS GS -1 20 2) T =85 C j I V =20 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =4.5 V, I =50 A -1.6 2.0 m DS(on) GS D V =10 V, I =100 A -1.2 1.5 GS D Rev. 1.0 page 2 2013-05-27