IPB180N10S4-02 TM OptiMOS -T2 Power-Transistor Product Summary V 100 V DS R 2.5 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB180N10S4-02 PG-TO263-7-3 4N1002 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I Continuous drain current T =25C, V =10V 180 A D C GS 2) T =100C, V =10V 171 C GS 2) I T =25C 720 Pulsed drain current D,pulse C 2) E I =90A 1110 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 180 A AS V Gate source voltage -20V GS P T =25C Power dissipation 300 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2013-01-30 IPB180N10S4-02 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R---0.5K/W thJC SMD version, device on PCB R minimal footprint - - 62 thJA 2 3) -- 40 6cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I = 1mA 100 - - V (BR)DSS GS D V V =V , I =275A Gate threshold voltage 2.0 2.7 3.5 GS(th) DS GS D V =100V, V =0V, DS GS I Zero gate voltage drain current -0.1 1 A DSS T =25C j V =100V, V =0V, DS GS - 10 100 2) T =125C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =10V, I =100A Drain-source on-state resistance -2.0 2.5m DS(on) GS D Rev. 1.0 page 2 2013-01-30