Final Data Sheet IPB180P04P4-03 OptiMOS -P2 Power-Transistor Product Summary V -40 V DS R 2.8 mW DS(on) I -180 A D Features P-channel - Normal Level - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Drain Pin 4, Tab Gate Pin 1 Source Pin 2, 3, 5, 6, 7 Type Package Marking IPB180P04P4-03 PG-TO263-7-3 4QP0403 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit T =25C, C 1) I -180 A Continuous drain current D V =-10V GS T =100C, C -131 2) V =-10V GS 2) I T =25C -720 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =-90A 90 mJ AS D I Avalanche current, single pulse - -180 A AS V Gate source voltage - 20 V GS P T =25C Power dissipation 150 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.1 page 1 2018-01-18Final Data Sheet IPB180P04P4-03 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics R Thermal resistance, junction - case - - - 1.0 K/W thJC Thermal resistance, junction - R - - - 62 thJA ambient, leaded SMD version, device on PCB R minimal footprint - - 62 thJA 2 3) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I = -1mA -40 - - V (BR)DSS GS D V V =V , I =-410A Gate threshold voltage -2.0 -3.0 -4.0 GS(th) DS GS D V =-32V, V =0V, DS GS Zero gate voltage drain current I - -0.1 -1 A DSS T =25C j V =-32V, V =0V, DS GS - -20 -200 2) T =125C j I V =-20V, V =0V Gate-source leakage current - - -100 nA GSS GS DS R V =-10V, I =-100A Drain-source on-state resistance - 2.0 2.8 mW DS(on) GS D Rev. 1.1 page 2 2018-01-18