Final Data Sheet IPB180P04P4L-02 OptiMOS -P2 Power-Transistor Product Summary V -40 V DS R 2.4 m W DS(on),max I -180 A D Features PG-TO263-7-3 P-channel - Logic Level - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Drain Intended for reverse battery protection Pin 4, Tab Gate Pin 1 Type Package Marking Source IPB180P04P4L-02 PG-TO263-7-3 4QP04L02 Pin 2, 3, 5, 6, 7 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit T =25C, C Continuous drain current I -180 A D 1) V =-10V GS T =100C, C -140 2) V =-10V GS 2) I T =25C -720 Pulsed drain current D,pulse C E I =-90A Avalanche energy, single pulse 84 mJ AS D Avalanche current, single pulse I - -180 A AS Gate source voltage V - +5/-16 V GS P T =25C Power dissipation 150 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.4 page 1 2019-07-04Final Data Sheet IPB180P04P4L-02 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics R Thermal resistance, junction - case - - - 1 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = -1mA Drain-source breakdown voltage -40 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =-410A -1.2 -1.7 -2.2 GS(th) DS GS D V =-32V, V =0V, DS GS Zero gate voltage drain current I - -0.1 -1 A DSS T =25C j V =-32V, V =0V, DS GS - -20 -200 2) T =125C j Gate-source leakage current I V =-16V, V =0V - - -100 nA GSS GS DS R V =-4.5V, I =-100A Drain-source on-state resistance - 2.6 3.9 m W DS(on) GS D V =-10V, I =-100A - 1.8 2.4 GS D Rev. 1.4 page 2 2019-07-04