X-On Electronics has gained recognition as a prominent supplier of IPB600N25N3GATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPB600N25N3GATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPB600N25N3GATMA1 Infineon

IPB600N25N3GATMA1 electronic component of Infineon
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See Product Specifications
Part No.IPB600N25N3GATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO263-3
Datasheet: IPB600N25N3GATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.8405 ea
Line Total: USD 2.84 
Availability - 2328
Ship by Fri. 11 Oct to Tue. 15 Oct
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2328
Ship by Fri. 11 Oct to Tue. 15 Oct
MOQ : 1
Multiples : 1
1 : USD 2.8405
10 : USD 2.346
25 : USD 2.3115
100 : USD 1.7825
500 : USD 1.518
1000 : USD 1.4835
2000 : USD 1.449

3880
Ship by Mon. 07 Oct to Fri. 11 Oct
MOQ : 1000
Multiples : 1000
1000 : USD 2.0621
2000 : USD 1.9443
5000 : USD 1.8559

2665
Ship by Mon. 07 Oct to Fri. 11 Oct
MOQ : 9
Multiples : 1
9 : USD 4.9748
12 : USD 3.7855
50 : USD 3.283
100 : USD 3.1323
500 : USD 2.3282
2000 : USD 2.144

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IPB600N25N3GATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPB600N25N3GATMA1 and other electronic components in the MOSFETs category and beyond.

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IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G TM OptiMOS 3 Power-Transistor Product Summary Features V 250 V DS N-channel, normal level R 60 m W DS(on),max Excellent gate charge x R product (FOM) DS(on) I 25 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Halogen-free according to IEC61249-2-21 Ideal for high-frequency switching and synchronous rectification Type IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G Package PG-TO263-3 PG-TO220-3 PG-TO262-3 Marking 600N25N 600N25N 600N25N Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25C Continuous drain current 25 A D C T =100C 18 C 2) I T =25C 100 Pulsed drain current D,pulse C E I =25A, R =25W Avalanche energy, single pulse 210 mJ AS D GS Reverse diode dv /dt dv /dt 10 kV/s V Gate source voltage 20 V GS Power dissipation P T =25C 136 W tot C T , T Operating and storage temperature -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 2) See figure 3 Rev. 2.3 page 1 2011-07-14IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1.1 K/W thJC R minimal footprint - - 62 thJA Thermal resistance, junction - ambient 3) - - 40 6 cm2 cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =1mA 250 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =90A 2 3 4 GS(th) DS GS D V =200V, V =0V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25C j V =200V, V =0V, DS GS - 10 100 T =125C j Gate-source leakage current I V =20V, V =0V - 1 100 nA GSS GS DS R V =10V, I =25A Drain-source on-state resistance - 51 60 m W DS(on) GS D Gate resistance R - 2.5 - W G V >2 I R , DS D DS(on)max g Transconductance 24 47 - S fs I =25A D 3) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.3 page 2 2011-07-14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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