The IPB60R055CFD7ATMA1 with MOSFET HIGH POWER_NEW is a 55V, dual N-channel MOSFET that is suitable for a wide range of industrial and consumer applications. This device features low drain-source on-state resistance (RDSon) and is manufactured by Infineon Technologies. It has an impressive 0.56O RDSon across both channels, and a maximum operating temperature of 150°C, making it ideal for high-power applications. With these characteristics, it can support a wide range of functions, such as power supply conversion and switching, battery management, DC/DC converters, motor control, and lighting control systems. This device is also resistant to transient voltage surges and has a high blocking voltage capability, making it suitable for higher power applications.