IPB60R060C7ATMA1 Infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPB60R060C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket600V CoolMOS C7 Power Transistor IPB60R060C7 DPAK 1 Description CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and tab pioneered by Infineon Technologies. 600V CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. 2 1 The 600V C7 is the first technology ever with R *A below 1Ohm*mm. DS(on) 3 Features Suitable for hard and soft switching (PFC and high performance LLC) Increased MOSFET dv/dt ruggedness to 120V/ns Drain Increased efficiency due to best in class FOM R *E and R *Q Pin 2, Tab DS(on) oss DS(on) g Best in class RDS(on) /package Qualified for industrial grade applications according to JEDEC (J-STD20 Gate and JESD22) Pin 1 Source Pin 3 Benefits Increased economies of scale by use in PFC and PWM topologies in the application Higher dv/dt limit enables faster switching leading to higher efficiency Enabling higher system efficiency by lower switching losses Increased power density solutions due to smaller packages Suitable for applications such as server, telecom and solar Higher switching frequencies possible without loss in efficiency due to low Eoss and Qg Applications PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. Computing, Server, Telecom, UPS and Solar. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit VDS Tj,max 650 V R 60 m DS(on),max Q 68 nC g.typ I 135 A D,pulse I T<150C 54 A D,continuous j E 400V 8.1 J oss Body diode di/dt 420 A/s Type / Ordering Code Package Marking Related Links IPB60R060C7 PG-TO 263 60C7060 see Appendix A Final Data Sheet 2 Rev. 2.0, 2015-11-30