IPB60R080P7 MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body 2 diode against hard commutation and excellent ESD capability. 1 Furthermore, extremely low switching and conduction losses make 3 switching applications even more efficient, more compact and much cooler. Features Drain Pin 2, Tab Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness Significant reduction of switching and conduction losses Gate Excellent ESD robustness >2kV (HBM) for all products Pin 1 Better RDS(on)/package products compared to competition enabled by a Source low R *A (below 1Ohm*mm) DS(on) Pin 3 Fully qualified acc. JEDEC for Industrial Applications Benefits Ease of use and fast design-in through low ringing tendency and usage across PFC and PWM stages Simplified thermal management due to low switching and conduction losses Increased power density solutions enabled by using products with smaller footprint and higher manufacturing quality due to >2 kV ESD protection Suitable for a wide variety of applications and power ranges Potential applications PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit VDS Tj,max 650 V RDS(on),max 80 m Q 51 nC g,typ I 110 A D,pulse E 400V 5.5 J oss Body diode di /dt 900 A/s F Type / Ordering Code Package Marking Related Links IPB60R080P7 PG-TO 263-3 60R080P7 see Appendix A Final Data Sheet 1 Rev. 2.1, 2018-05-15600V CoolMOS P7 Power Transistor IPB60R080P7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.1, 2018-05-15