IPB60R199CP CoolMOS Power Transistor Product Summary Features V T 650 V DS j,max Lowest figure-of-merit R xQ ON g R 0.199 DS(on),max Ultra low gate charge Q 32 nC g,typ Extreme dv/dt rated High peak current capability 1) Qualified according to JEDEC for target applications PG-TO263 Pb-free lead plating RoHS compliant CoolMOS CP is specially designed for: Hard switching topologies, for Server and Telecom Type Package Ordering Code Marking IPB60R199CP PG-TO263 SP000223256 6R199P Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25 C 16 A D C T =100 C 10 C 2) 51 I T =25 C Pulsed drain current D,pulse C E I =6.6 A, V =50 V Avalanche energy, single pulse 436 mJ AS D DD 2),3) E I =6.6 A, V =50 V Avalanche energy, repetitive t 0.66 AR D DD AR 2),3) I 6.6 A Avalanche current, repetitive t AR AR MOSFET dv /dt ruggedness dv /dt V =0...480 V 50 V/ns DS V Gate source voltage static 20 V GS 30 AC (f >1 Hz) P T =25 C Power dissipation 139 W tot C T , T -55 ... 150 Operating and storage temperature C j stg Rev. 2.2 page 1 2011-12-20IPB60R199CP Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I 9.9 Continuous diode forward current A S T =25 C C 2) I 51 Diode pulse current S,pulse 4) dv /dt 15 V/ns Reverse diode dv /dt Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 0.9 K/W thJC SMD version, device R on PCB, minimal -- 62 thJA footprint Thermal resistance, junction - SMD version, device ambient 2 on PCB, 6 cm cooling -35- 5) area Soldering temperature, T reflow MSL1 - - 260 C sold wave- & reflowsolderin allowed Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =250 A 600 - - V (BR)DSS GS D V V =V , I =0.66 mA Gate threshold voltage 2.5 3 3.5 GS(th) DS GS D V =600 V, V =0 V, DS GS Zero gate voltage drain current I -- 1A DSS T =25 C j V =600 V, V =0 V, DS GS -10- T =150 C j V =20 V, V =0 V Gate-source leakage current I - - 100 nA GSS GS DS V =10 V, I =9.9 A, GS D Drain-source on-state resistance R - 0.18 0.199 DS(on) T =25 C j V =10 V, I =9.9 A, GS D - 0.49 - T =150 C j Gate resistance R f =1 MHz, open drain - 2 - G Rev. 2.2 page 2 2011-12-20